A study of Schottky contact devices simulation
碩士 === 中正理工學院 === 電機工程研究所 === 86 === In this study, a two-dimension device simulator is employed to analyze the electronic properties of high speed devices(such as Doide、MESFET、MISFET and MOSFET etc..)The carrier distri- butions considered here involve both the Boltzmann and Fermi- Dirac statistics...
Main Authors: | Tu, Gao-Wei, 涂高維 |
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Other Authors: | Zhang, Lian-Bi |
Format: | Others |
Language: | zh-TW |
Published: |
1998
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Online Access: | http://ndltd.ncl.edu.tw/handle/58471608050788623872 |
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