The Reliability of Ultra-thin Gate Oxide
碩士 === 中華大學 === 電機工程研究所 === 86 === The key issue for ultra-thin oxide film integrity reliability is the presence of native oxide, thickness uniformity, interface smoothness, leakage current, stress-induced leakage current and reliability. In out study, we have designed a leak-tight oxidation fu...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06213704889877444052 |