Study on SnO2 film for ion sensitive field effect transistor
碩士 === 中原大學 === 電子工程研究所 === 86 === The ion sensitive field effect transistor (ISFET) is a device composed of a conventional ion selective electrode and a MOSFET device, and applied to the measurement of the ion content in the solution. ISFET*s have potential advantages overconventional ion selective...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57253897079844325963 |