characterizations of the Ho-doped InGaP layers grown by liquid phase epitaxy
碩士 === 中原大學 === 電子工程研究所 === 86 === This is the first time to present the results concerned with the doping of Ho in InGaP compound semiconductor. The InGaP:Ho epilayer is grown by means of Liquild Phase Epitaxy (LPE). After growth, the crystalline and optical qualities of the Ho-doped I...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79350421208918352441 |