| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 86 === This is the first time to present the results concerned with the doping of Ho in InGaP compound semiconductor. The InGaP:Ho epilayer is grown by means of Liquild Phase Epitaxy (LPE). After growth, the crystalline and optical qualities of the Ho-doped InGaP layers are evaluated to investigate the effect of Ho doping on Characteristic photoluminescent emission. From Nomarski microscopic analysis results, it is obvious that a mirror like surface can be achieved by light doping, while the rougher surface is caused by heavy doping. Besides, X-ray diffraction spectra indicate that the lattice constant of InGaP epilayer is increasing with the Ho doping amount. Also, the measurements of PL spectra performed at room temperature exhibit there is a optimum doping amount of Ho for InGaP epilayers. Furthermore, the low temperature PL measurements at 15K show two emission lines lying at 1.09μm and 1.26μm, respectively. Finally, the PL measurements performed at various temperatures are further to demonstrate that a defined luminescent line of wavelength 1.26μm has been achieved by doping Ho in InGaP layers.
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