A Study of the Device Design in the Flash Memory
碩士 === 大葉大學 === 電機工程研究所 === 86 === The influence of bias conditions for program,erase operation and reliability for the flash memory device will be developed in ourstudy. The flash memory cell structure is a simple self-aligned doublepolysilicon with the stacked gate structure without any...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28168834721182950943 |