A Study on AC Characteristics of 0.18um gate length PMOSFET
碩士 === 逢甲大學 === 電機工程研究所 === 86 === In high density VLSI circuit scaled, MOS device scaling down has led to reliability problems, such as off-sate leakage current and hot carrier degradation. All of these problems need to be resolved in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51285823632962228902 |