Growth of the GaN films on (0001) sapphire substrates
碩士 === 逢甲大學 === 材料科學研究所 === 86 === GaN films were grown on (0001) sapphire substrates in a temperature range of 500~1000℃ by exposing the substrates to trimethylgallium (TMG) and NH3 one at a time. High quality GaN films were achieved at 800~1000℃ with a thin GaN buffer layer predeposited at 500℃...
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| Format: | Others |
| Language: | zh-TW |
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1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98321970208710196484 |