The Numerical Simulation of Amorphous Silicon Thin-Film Transistors

碩士 === 義守大學 === 電機工程研究所 === 86 ===   In the thesis, the finite element method is used to simulate the switch-on and switch-off dynamic characteristics of amorphous silicon thin-film transistors. The switch-on time constant is determined by the time required to fill bulk trap states in the semicon...

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Bibliographic Details
Main Authors: Chen, Hsuan-Hsien, 陳軒賢
Other Authors: Huang, Jung-Sheng
Format: Others
Language:zh-TW
Published: 1998
Online Access:http://ndltd.ncl.edu.tw/handle/59997187831025816301