Study of Interfacial Reactions of Pd/Si0.76Ge0.24/Si(100) by Pulsed KrF Laser and Vacuum Annealinng
碩士 === 國立成功大學 === 材料科學(工程)學系 === 86 === Abstract-The interfacial reactions of Pd/Si0.76Ge0.24 were studiedby pulsed KrF laser annealing as a function of energy densityand pulsed number. At an energy density of 0.1-0.2 J/cm2 a continuous ger...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33359431720203192313 |