Study of Interfacial Reactions of Pd/Si0.76Ge0.24/Si(100) by Pulsed KrF Laser and Vacuum Annealinng

• Main Authors: Chen, Da-Zen, 陳大仁
• Other Authors: Lin Wen-Tai
• Format: Others
• Language: zh-TW
• Published: 1998
• Online Access: http://ndltd.ncl.edu.tw/handle/33359431720203192313

碩士 === 國立成功大學 === 材料科學(工程)學系 === 86 === Abstract-The interfacial reactions of Pd/Si0.76Ge0.24 were studiedby pulsed KrF laser annealing as a function of energy densityand pulsed number. At an energy density of 0.1-0.2 J/cm2 a continuous germanosilicide layer commpossed of a low temperature phase, Pd2(Si1-xGex), and a high tempperature phase, Pd(Si1-xGex),was formed. In contrast to vacuum annealing Ge segregation out of the germanosilicide layer and the strain relaxation of the residualSi0.76Ge0.24 film could be effectively suppressed by pulsed KrF laserannealinng at 0.1 J/cm2. Multiple pulse annealing at 0.1 J/cm2 could further homogenize the Pd concentraation of the germanosilicide ofthe germanosilicide layer and promote the growth of Pd(Si1-xGex).Concurrently, the smoothness of the germanosilicide layer was substantially improved in comparsion with those grown by vacuum annealingat temperature above 200℃. The studies also revealed that for a multiplepulse annealing at 0.1 J/cm2 with a low repetition rate, 1 Hz, the evolution of phase formation and Pd diffusion could be proceedeed by each individuallaser pulse.