Studies of the Electro-optic Properties of InP and InGaAsP Heterostructure by Photoreflectance
碩士 === 國立成功大學 === 物理學系 === 86 === In previous studies, we found that the surface Fermi level of InPsurface-intrinsic-n+(SIN+) structures is pinned at 0.35eV below the conduction band edge. In this thesis, we used the technique of modulation spectroscopy o...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84279327305459174963 |