Growth Single Crystal AgGaS2, AgGaSe2 And AgGa(S0.1Se0.9)2 With Oriented Directional Seed
碩士 === 國立交通大學 === 光電工程研究所 === 86 === In this study, AgGaS2 AgGaSe2 and AgGa(S0.1Se.9)2 single crystal were growth by Vertical Bridgman method. By changing the growth rate,we can decreased the crack occured in the crystals. Using X-ray PL,FTIR,DTA Raman spectrum, EPMA these measurements, we find t...
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| Format: | Others |
| Language: | zh-TW |
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1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73794156166904751002 |