Study of Rapid-thermal-annealled Arsenic-ion implanted GaAs Photoductive Switch
碩士 === 國立交通大學 === 光電工程研究所 === 86 === We have studied the characteristics of photoconductiv switchs fabricated on rapid-thermal-annealled GaAs that were implanted with 200keV arsenic ions at different dosages. The dark currents of the devices were observed to be increasing with the implanting do...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39468576825492895345 |