The Effect of Strain and Heavy Doping on Arsenic Precipitation in GaAs Grown by Molecular Beam Epitaxy at Low Temperatures
博士 === 國立交通大學 === 電子物理系 === 86 === GaAs or related compounds thin films grown by Molecular Beam Epitaxy (MBE) at low growth temperatures (LTs) of 200-300℃ contains a high volume of excess arsenic (1~2 at %). Upon post-growth annealing at 600~900℃, the excess As forms precipitates in the GaAs matrix...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99247316992847970555 |