Effect of Buffer Layer Thickness on Electrical Properties and Deep Levels in GaN
碩士 === 國立交通大學 === 電子物理系 === 86 === Buffer layer was proven effective to improve the electrical properties of GaN films. In this work, five GaN samples were studied which are grown under same conditions except for the buffer layer thickness. The buffer layer thickness of all these samples are...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22156188904861870284 |