The Study of InAs Metal-Oxide-Semiconductor Capacitor and Infrared Photodetector
碩士 === 國立臺灣大學 === 電機工程學系研究所 === 86 === Several kinds of dielectric growth techniques, i.e. sputtering of SiO2, PECVD SiNx, E-Gun evaporation of SiO2, photo-CVD SiO2, LPD SiO2/PECVD a-SiHx, had been applied to fabricate the InAs MOS capacitors. The...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76186468526855509087 |