Study of the thermal analysis and the improvement in thickness uniformity of rapid thermal oxides

碩士 === 國立臺灣大學 === 電機工程學系研究所 === 86 === As the dimension of devices in ULSI shrinks, in order to minimize the dopant redistribution or grow thin gate oxides, rapid thermal proc ess (RTP) becomes a more and more important tec...

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Bibliographic Details
Main Authors: Chang, Hung, 張弘
Other Authors: Jenn-Gwo Hwu
Format: Others
Language:en_US
Published: 1998
Online Access:http://ndltd.ncl.edu.tw/handle/88318092726116487978