Modeling of pre-stress and post-stress submicron and deep submicron MOSFET''s characteristics
博士 === 國立臺灣科技大學 === 電子工程技術研究所 === 86 === In this thesis, the pre-stress I-V characteristics of submicrometer and deepsubmicrometer n-type lightly-doped-drain (LDD) and single-drain (SD)MOSFET''s have been modeled. The effect of velocity overshoot anddrain-induced-barrie...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24533275804760700023 |