The Study of SnO2 Thin Films Gas Sensors Prepared by PECVD
碩士 === 大同工學院 === 材料工程研究所 === 86 === In this study, the sensor was fabricated by using PECVD process and Tetramethyltin and O2 as precusors ; further, SnO2 thin films were deposited on comb-shaped electrode. To stabilize the microstructure and electrical properties of gas sensors, thin fil...
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1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59914601892024992218 |
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ndltd-TW-086TTIT01590032015-10-13T17:34:49Z http://ndltd.ncl.edu.tw/handle/59914601892024992218 The Study of SnO2 Thin Films Gas Sensors Prepared by PECVD 電漿CVD法製備氧化錫薄膜氣體感測器之研究 Hsiung Cheng-Fu 熊承福 碩士 大同工學院 材料工程研究所 86 In this study, the sensor was fabricated by using PECVD process and Tetramethyltin and O2 as precusors ; further, SnO2 thin films were deposited on comb-shaped electrode. To stabilize the microstructure and electrical properties of gas sensors, thin film was annealed or doped with antimony to investigate the influence of microstructure in the characteristic of films.As a result of the study, gas sensitivity was found to decrease with annealing temperature in the range of 330℃ to 630℃. At 430℃, it shows maximum gas sensitivity of 7.9 and 2.9 for 2000ppm H2 and 2000ppm ethanol gas, respectively. The other hand, film sensitivity follows the rise of operating temperature and gas concentration. Doping antimony decrease film resistance, with no help in promoting gas sensitivity of films. Ko-Shao Chen 陳克紹 1998 學位論文 ; thesis 0 zh-TW |
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NDLTD |
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zh-TW |
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Others
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NDLTD |
| description |
碩士 === 大同工學院 === 材料工程研究所 === 86 === In this study, the sensor was fabricated by using PECVD process and Tetramethyltin and O2 as precusors ; further, SnO2 thin films were deposited on comb-shaped electrode. To stabilize the microstructure and electrical properties of gas sensors, thin film was annealed or doped with antimony to investigate the influence of microstructure in the characteristic of films.As a result of the study, gas sensitivity was found to decrease with annealing temperature in the range of 330℃ to 630℃. At 430℃, it shows maximum gas sensitivity of 7.9 and 2.9 for 2000ppm H2 and 2000ppm ethanol gas, respectively. The other hand, film sensitivity follows the rise of operating temperature and gas concentration. Doping antimony decrease film resistance, with no help in promoting gas sensitivity of films.
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| author2 |
Ko-Shao Chen |
| author_facet |
Ko-Shao Chen Hsiung Cheng-Fu 熊承福 |
| author |
Hsiung Cheng-Fu 熊承福 |
| spellingShingle |
Hsiung Cheng-Fu 熊承福 The Study of SnO2 Thin Films Gas Sensors Prepared by PECVD |
| author_sort |
Hsiung Cheng-Fu |
| title |
The Study of SnO2 Thin Films Gas Sensors Prepared by PECVD |
| title_short |
The Study of SnO2 Thin Films Gas Sensors Prepared by PECVD |
| title_full |
The Study of SnO2 Thin Films Gas Sensors Prepared by PECVD |
| title_fullStr |
The Study of SnO2 Thin Films Gas Sensors Prepared by PECVD |
| title_full_unstemmed |
The Study of SnO2 Thin Films Gas Sensors Prepared by PECVD |
| title_sort |
study of sno2 thin films gas sensors prepared by pecvd |
| publishDate |
1998 |
| url |
http://ndltd.ncl.edu.tw/handle/59914601892024992218 |
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