Studying and researching the strategies to improve the uniform temperature of rapid thermal processing

• Main Authors: Pi-ta Huang, 黃必達
• Other Authors: F. S. Wang
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/71183727383971127487

碩士 === 國立中正大學 === 化學工程研究所 === 87 === The thermal processing plays an important role of integrated circuit fabrication. It can not only supply the heat to make the chamber achieving high temperature, but utilize the thermal annealing process for removing the defects during processing. In recent years, the devices tend toward reduction of size in order to obtain fast speed and higher packing density, so the conventional furnace is replaced by the rapid thermal process. Because the conventional furnace has a high thermal budget and needs long processing time which causes impurity/dopant reflow influencing the quality. The equipment of RTP system involves a lamp system in which tungsten-halogen point sources are configured in concentric rings to provide a circularly symmetric intensity profile. Both temperature distribution nonuniformity of the steady state and thermal stress of the transient state are main drawbacks in rapid thermal processing, therefore we must simultaneously consider both problems to solve such a RTP optimization problem. In this study, in order to improve temperature distribution uniformity for steady state, we supply four difference cases to compensate the heat flux of the wafer edge and implement optimal chamber design at the same time.