Investigation of Thermosonic Wire Bonding in Microelectronics from a Viewpoint of Interfacial Phenomena

• Main Authors: Lin Jen-Nan, 林政男
• Other Authors: Jeng Yeau-Ren
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/47142403748748105535

碩士 === 國立中正大學 === 機械系 === 87 === Techniques of electronic package face great challenge nowadays due to the current trend of miniturization and fast-to-market for electronic and computer products. Wire bonding, being responsible for electricity and signal delivery, is a critical process in electronic package. Therefore, many studies have been conducted to understand the bonding mechanism and the effect of operation parameters on bonding quality. However, the bonding mechanism and interrelationship of operation parameters are still not well understood. This study investigated thermal ultrasonic wire bonding process from the viewpoint of interfacial phenomena. Theoretical studies were conducted to obtain the real contact area, thermal contact conductance, friction energy and flash temperature, between the wire and pad interface under different operation conditions. Parameteric studies were conducted to study the effects of operation parameters on bonding strength. Finally, the relationship between interfacial phenomena such as real contact area, thermal contact conductance, friction energy and flash temperature, and operation parameter of bonding process was established by combining the relationship of interfacial phenomena and operation parameters obtained from theoretical study and the relationship of operation parameters and bonding strength from experimental tests. Results from this study provide interpretation for bonding mechanism and theoretical foundation of bonding strength. These results also provide systematic approach for improving yield rate of bonding process and advancement of the techniques of bonding process.