Novel Approach to form Epitaxial SiGe
碩士 === 中華大學 === 電機工程學系碩士班 === 87 === Here, we propose a new process, form unstrained SiGe alloy, that is simple, inexpensive, reliable and compatible with the existing IC technology. Instead of epitaxial growth by molecular beam epitaxy or ultra high-vacuum chemical vapor deposition, the...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Online Access: | http://ndltd.ncl.edu.tw/handle/17663177430510386774 |