Novel Approach to form Epitaxial SiGe
碩士 === 中華大學 === 電機工程學系碩士班 === 87 === Here, we propose a new process, form unstrained SiGe alloy, that is simple, inexpensive, reliable and compatible with the existing IC technology. Instead of epitaxial growth by molecular beam epitaxy or ultra high-vacuum chemical vapor deposition, the...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/17663177430510386774 |