The Study of Copper Electroplating for ULSI Interconnection.

碩士 === 中原大學 === 化學工程學系 === 87 === Cu metallization will play an important role in future microelectronic processing because Cu has lower resistivity and higher electromigration resistance compared to Al. Copper could be deposited by either physical sputtering, chemical vapor deposition (CVD), or el...

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Bibliographic Details
Main Authors: W.C Gau, 高武群
Other Authors: C.L. Cheng
Format: Others
Language:zh-TW
Published: 1999
Online Access:http://ndltd.ncl.edu.tw/handle/35288742258771918482