| Summary: | 碩士 === 中原大學 === 化學工程學系 === 87 === Cu metallization will play an important role in future microelectronic processing because Cu has lower resistivity and higher electromigration resistance compared to Al. Copper could be deposited by either physical sputtering, chemical vapor deposition (CVD), or electrochemical deposition. Since electroplating has advantages of low processing temperature, short processing time, and simple deposition facilities, which compared to traditional sputtering and CVD, it becomes the most attractive technique implemented in Cu metallization. However, many challenges are still to be overcome in order to successfully implement copper metallization in ultra-large scale integration (ULSI) processing. In this research, we study some aspects of copper electroplating related to chemical additives effected on Cu deposition.
First of all, we study the relationships among deposition rates, deposition time, and applied current. Then, we alter some operation conditions to study the correlation of film resistivity with film morphology. Finally, we demonstrate that Cu could be electroplated into fine trenches or small size of vias when a novel additive is used as a gap-filling promoter. The electroplating process is occurred in a 0.3-micrometer dimension of fine trench / vias with an aspect ratio of 3. No void formation is found when this new additive is present.
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