The Study of Fast Neutron Irradiation on Intrinsic Gettering Processes

碩士 === 中原大學 === 電子工程學系 === 87 === One of the main sources of bulk and surface defects is oxygen precipitation, a correlation between device yield reduction and oxygen precipitation has been directly evidenced. Nevertheless, oxygen precipitation formed far from the epi-substrate interface,...

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Bibliographic Details
Main Authors: Wei Jiunn-Hwan, 魏俊桓
Other Authors: Liao Sen-Mao
Format: Others
Language:en_US
Published: 1999
Online Access:http://ndltd.ncl.edu.tw/handle/05040819108352705071