The study of high dielectric (Ba,Sr)TiO3 thin film deposited by rf magnetron co-sputtering
碩士 === 中原大學 === 電子工程學系 === 87 === This thesis is to study the fabrication process of (Ba,Sr)TiO3 (ie: BST) thin films by radio frequency co-sputtering. BST has attracted increasing interest for the application of capacitor cells in DRAMs because of the properties of high dielectric consta...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41853847264183127018 |
| Summary: | 碩士 === 中原大學 === 電子工程學系 === 87 === This thesis is to study the fabrication process of (Ba,Sr)TiO3 (ie: BST) thin films by radio frequency co-sputtering. BST has attracted increasing interest for the application of capacitor cells in DRAMs because of the properties of high dielectric constant、low leakage current density and low dielectric loss. The paper is summarized as the following:
Ch.1 There introduce the development of memory tersely and research of
BST presently.
Ch.2 There introduce about the theoretical background of dielectric
materials and the basic properties of BST, and the deposition
methods of BST thin films in literature.
Ch.3 There list the fabrication procedure of BST thin films, including
substrate preparation、growth parameters、process of electrodes and
post-annealing, as well as the analysis of thin films.
Ch.4 There are results and discussions about the effect of various process
parameter for BST thin films. We have researched the optimal
process to improve the dielectric constant and electrical leakage
of the films
Ch.5 There are conclusions we have obtained optimal growth conditions
for the BST thin films deposited on Pt/Ti/SiO2/n-Si substrates. The
dielectric constant of the films is 348、19 fF/cell of capacitance per
cell and the leakage current density is 1.2*10E-7 A/cm2 at the bias of
1V? which meet the requirements of 256MB DRAM.
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