The fabrication of GaAsP/GaP homojunction diodes by LPE
碩士 === 中原大學 === 電子工程學系 === 87 === Ⅲ-Ⅴ ternary semiconductor alloy crystals are of vital importance in fabrication of optoelectronic and high-speed devices since the expected band-gap energy and lattice constants can be achieved simply by controlling their composition. The GaAs1-xPx alloy...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/04537306694394555816 |