Characteristics of thermal annealing on Nd-doped AlGaAs epitaxial layer grown by liquid phase epitaxy

碩士 === 中原大學 === 電子工程學系 === 87 === In this study, the characteristic of the rare-earth element Nd-doped AlGaAs epitaxial layer grown by liquid phase epitaxy was investigated as a function of anneal temperatures. The optimum anneal conditions was found first in this report. In vi...

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Bibliographic Details
Main Authors: Guan Zhen-Ting, 管振廷
Other Authors: Liao Sen-mao
Format: Others
Language:en_US
Published: 1999
Online Access:http://ndltd.ncl.edu.tw/handle/08770719063704748064