The investigation of GaN thin films deposited by r.f. reactive magnetron sputtering.
碩士 === 大葉大學 === 電機工程研究所 === 87 === The characteristics of gallium nitride (GaN) thin films deposited by r.f. reactive magnetron sputtering are studied. The deposition parameters are constant during sputtering (e.g. the r.f. power, deposition pressure, substrate temperature) besides the ni...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90869879738367569873 |