Simulation of Amorphous Si Thin-Film Transistors with Finite Element Method
碩士 === 義守大學 === 電子工程學系 === 87 === In the thesis, the finite element method is used to simulate the switch-on and switch-off dynamic characteristics and I-V behavior of amorphous silicon thin-film transistors. The switch-on time constant is determined by the time required to fill bulk trap...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/54562350650915408922 |