The growth of oxygen precipitate and related defects in Czochralski silicon annealed at 1150℃
碩士 === 國立中興大學 === 材料工程學研究所 === 87 === The main purpose of this research is to study the influence of the silicon interstitials generated during wet oxidation on the growth of microdefects in a two-step anneals. The low-high two-step anneal scheme using 650℃ as nucleation temperature and 1150℃ as gro...
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| Format: | Others |
| Language: | zh-TW |
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1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85485797039726650843 |