Interfacial Reactions of Ti/Si0.76Ge0.24 with Various Thicknesses of the Interposed Mo layer by Pulsed KrF LaserAnnealing and Rapid Thermal Annealing
碩士 === 國立成功大學 === 材料科學及工程學系 === 87 === The interfacial reactions of Ti/SiGe and Ti/Mo/SiGe systems by rapid thermal annealing(RTA) and pulsed KrF laser annealing were investigated. For the samples with interposing Mo layer, upon annealing at 600—800℃ by using RTA the C49 phase was never f...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70307497584342522335 |