Study of Interfacial Reactions of Mo/Si0.76Ge0.24
碩士 === 國立成功大學 === 材料科學及工程學系 === 87 === Interfacial reactions of Mo/Si0.76Ge0.24 were studied by pulsed KrF laser annealing as a function of the energy density and pulse number. Vacuum annealing and rapid thermal annealing were also performed on some samples for comparison. Upon vacuum ann...
Main Authors: | Hsin-wei Huang, 黃信維 |
---|---|
Other Authors: | Wen Tai Lin |
Format: | Others |
Language: | zh-TW |
Published: |
1999
|
Online Access: | http://ndltd.ncl.edu.tw/handle/36126766141239761663 |
Similar Items
-
Study of Interfacial Reactions of Co/Si0.76Ge0.24/Si(100) by Pulsed KrF laser and Vacuum Annealing
by: Han, Yu-Lin, et al.
Published: (1998) -
Study of Interfacial Reactions of Pd/Si0.76Ge0.24/Si(100) by Pulsed KrF Laser and Vacuum Annealinng
by: Chen, Da-Zen, et al.
Published: (1998) -
Interfacial Reactions of Ti/Si0.76Ge0.24 with Various Thicknesses of the Interposed Mo layer by Pulsed KrF LaserAnnealing and Rapid Thermal Annealing
by: Jun-Jei Huang, et al.
Published: (1999) -
Synthesis and characterization of crystalline Ni0.76Cu0.24
by: Luis Antonio Flores Sánchez, et al.
Published: (2019-01-01) -
Y0.76Ho0.24FeGe2O7: a new member of thortveitite-like layered compounds
by: Ivonne Rosales, et al.
Published: (2009-07-01)