THE STUDIES OF GaN METAL-SEMICONDUCTOR INTERFACE AND ITS APPLICATION IN METAL-SEMICONDUCTOR-METAL PHOTODIODES
碩士 === 國立成功大學 === 電機工程學系 === 87 === GaN films were grown on the (0001) sapphire substrates by MOCVD using a horizontal reactor. The low-temperature GaN buffer layer, 250 A in thickness, was grown at 560℃. The high-temperature GaN films were grown at 1050℃. XRD observations indicated that...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40853987497856365581 |