The Growth and Fabrication of AlInAsSb/InGaAs NDR Devices
碩士 === 國立成功大學 === 電機工程學系 === 87 === In this thesis, we successfully grew high quality AlInAsSb bulk epitaxy layer and InGaAs bulk epitaxy layer lattice-matched on InP substrate with MOCVD. Besides, we grew 10 period AlInAsSb/InGaAs MQW sample for Double crystal X-ray diffractio...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39783849992480595495 |