The Growth and Fabrication of AlInAsSb/InGaAs NDR Devices

• Main Authors: Wu Kuo-Ming, 吳國銘
• Other Authors: Su Y.K.
• Format: Others
• Language: en_US
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/39783849992480595495

碩士 === 國立成功大學 === 電機工程學系 === 87 === In this thesis, we successfully grew high quality AlInAsSb bulk epitaxy layer and InGaAs bulk epitaxy layer lattice-matched on InP substrate with MOCVD. Besides, we grew 10 period AlInAsSb/InGaAs MQW sample for Double crystal X-ray diffraction (DCXRD) to identify the epitaxy quality and the growth rate. Second Ion Mass Spectrum (SIMS) has also been performed to make sure the elements of material. The four MQW samples with quantum well width from 6, 8, 10 to 18 nm respectively prepared for 8K PL measurement, and evaluated the conduction band offset of AlInAsSb/InGaAs heterostructure to be about 1 eV by utilizing the 3 band model envelope function approximation. Finally, we demonstrate a InGaAs/AlInAsSb/InGaAs single-barrier tunneling diode with barrier width of 10 nm. This tunneling diode has a high peak-to-valley current ratio (PVCR = 4) and high peak current density (JP = 910 A/cm2) at 300K. And a double-barrier resonant tunneling diode with 3 nm of AlInAsSb barrier, 6 nm of InGaAs quantum well width have the positive bias the PVCR is 26.1 and the peak current density is 8.9 kA/cm2. At the negative bias the PVCR is 12.7 and the peak current density is 9.3 kA/cm2 at 300K.