InAlGaP/GaAs Field-Effect Transistor and Bipolar Transistor Grown by Metalorganic Chemical Vapor Deposition
碩士 === 國立成功大學 === 電機工程學系 === 87 === In this thesis, an In0.5(Al0.33Ga0.67)0.5P/GaAs tunneling emitter bipolar transistor (TEBT) and metal-semiconductor field-effect transistor (MESFET) have been successfully fabricated by metalorganic chemical vapor deposition (MOCVD). An In0.5(Al0.33Ga0....
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/47457831813247887719 |