Structure and Properties of Ternary Si-C-N Films Deposited on Si Wafer by Microwave Plasma CVD

碩士 === 國立交通大學 === 材料科學與工程系 === 87 === Tenary crystalline Silicon carbon nitride films have been successfully synthesized on Si wafer by MPCVD with CH4 and N2 as source gases. Some of the Si substrates were pretreated by scratching the surface with various solutions suspending with adenine, diamond p...

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Bibliographic Details
Main Authors: Po-Ju Yang, 楊博如
Other Authors: Cheng-Tzu Kuo
Format: Others
Language:zh-TW
Published: 1999
Online Access:http://ndltd.ncl.edu.tw/handle/69620337725361019807