The Improvement of IrO2-based Sensing Device
碩士 === 國立交通大學 === 物理研究所 === 87 === A new H+-sensing Electrode based on sputtered Ta2O5 and IrO2 thin film. The mechanism is that only H+ can pass through Ta2O5 film. To insulate IrO2 film from intruding by other ions, IrO2 film was covered with Ta2O5 film. And the Fermi level of IrO2 film...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19393985463011377950 |