Radio frequency MOSFET

碩士 === 國立交通大學 === 電子工程系 === 87 === Small signal S parameters of a quarter micron Si MOSFET in common source configuration are measured from 100MHz to 18 GHz in different biasing conditions. From the S parameters we found the evidence of the non-quasi-static (NQS) effects, namely the low-p...

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Bibliographic Details
Main Authors: Yan-Hua Huang, 黃彥皓
Other Authors: C. Tsai
Format: Others
Language:zh-TW
Published: 1999
Online Access:http://ndltd.ncl.edu.tw/handle/47630350584396371167