Investigation of ULSI Damascene Key Process-Process Integration of Cu/Temperature Difference Liquid Phase Deposition SiOF/Low K MSQ
碩士 === 國立交通大學 === 電子工程系 === 87 === To reduce RC delay, integration of Cu and low K dielectric is an important issue in future back end of line (BEOL) process. Owing to the etching by-products of Cu are hard to volatile, conventional Al metallization was replaced by Damascene process. Howe...
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| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11393592874921029016 |