Formation of NiSi and NiSi Silicided Junction Diodes
碩士 === 國立交通大學 === 電子工程系 === 87 === This thesis studies the material properties and process technologies of nickel silicide relevant to VLSI applications. The process window for the formation of good quality NiSi films on single crystalline silicon substrate ranges from 400 to 600 oC. The...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86476269667247087715 |