Diffusion Behavior of Ion Implanted Sb+ Species in SiO2/Si Substrate
碩士 === 國立交通大學 === 電子工程系 === 87 === This thesis studies the diffusion behavior of ion implanted antimony (Sb) in Si as well as SiO2 under prolonged thermal process at high temperatures. The optimal annealing condition for the formation of n+ buried layer for bipolar transistor application...
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| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35938964533382848052 |