The effects of electrode materials, substrate temperatures, film thickness and sputtering gases on the electrical and dielectric characteristics of barium strontium titanate (Ba0.65Sr0.35TiO3) thin film capacitors
碩士 === 國立交通大學 === 電子工程系 === 87 === As the dimensions of the charge storage node in high-density dynamic random access memory (DRAM) are scaled down. Silicon dioxide and silicon oxynitride which have been used as capacitor dielectric materials are no longer applicable because their thickne...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45100422858587608902 |