The effects of electrode materials, substrate temperatures, film thickness and sputtering gases on the electrical and dielectric characteristics of barium strontium titanate (Ba0.65Sr0.35TiO3) thin film capacitors
碩士 === 國立交通大學 === 電子工程系 === 87 === As the dimensions of the charge storage node in high-density dynamic random access memory (DRAM) are scaled down. Silicon dioxide and silicon oxynitride which have been used as capacitor dielectric materials are no longer applicable because their thickne...
Main Authors: | Yong-Hong Chen, 陳永宏 |
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Other Authors: | Bi-Shiou Chiou |
Format: | Others |
Language: | zh-TW |
Published: |
1999
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Online Access: | http://ndltd.ncl.edu.tw/handle/45100422858587608902 |
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