Study of Advanced Low Dielectric Constant Materials for ULSI Intermetal Dielectric Applications
碩士 === 國立交通大學 === 電子工程系 === 87 === For ULSI circuits when feature size is scaled into the deep submicron region, The speed of the devices will be significantly limited by the interconnect delay. Low dielectric constant (K) materials will play a major role, with copper as the interconnect...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50335301534663409081 |