The Poison effect on Cu Electromigration Degradation
碩士 === 國立交通大學 === 電子工程系 === 87 === The use of low resistivity conductors and low dielectric constant interlevel dielectrics has been proposed to reduce the RC time delay and to improve electromigration (EM) damage. In this work, the metallization system with Cu and low K material, polyim...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87513690852724761851 |