Epitaxial Growth and Device Fabrication of GaN
博士 === 國立交通大學 === 電子工程系 === 87 === The material growth, material characterization, device fabrication and device analysis of GaN-based material were the focus topic of this thesis. The influence of 500 Å AlGaN thin single films as buffer layers or strain layers for GaN depositions over 6H-SiC substr...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91660694032102381959 |