Ultra-thin Gate Oxide Integrity for Metal Gate and Poly Gate Capacitors
碩士 === 國立交通大學 === 電子工程系 === 87 === Continued scaling of CMOS gate length to 100 nm region with ultra-thin gate oxide, we have problems of poly gate depletion and high gate resistance. To solve these problems, metal gate is a good candidate. We use TiN as gate and oxide or N2O oxide for ga...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61568867805295088523 |